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Dislocation-induced changes in quantum dots: step alignment and radiative emission

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Date

1999

Authors

Leon, R
Okuno, J
Lawton, R
Stevens-Kalceff, Marion Anne
Phillips, Matthew R
Zou, Jin
Cockayne, David John Hugh
Lobo, C

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

A new type of quantum dot (QD) alignment for an InGaAs/GaAs QD multilayered structure has been observed. In addition to two distinct types of InGaAs dot alignment in vicinal GaAs (001), an abrupt transition in QD sizes and concentrations was seen. This was accompanied by bright QD emission, even after formation of a dislocation array, and different behaviors with thermal intermixing.

Description

Keywords

Keywords: Cathodoluminescence; Crystal orientation; Dislocations (crystals); Electron beams; Interdiffusion (solids); Interfaces (materials); Iridium; Metallorganic chemical vapor deposition; Multilayers; Semiconducting indium gallium arsenide; Radiative recombinat

Citation

URI

http://hdl.handle.net/1885/93698

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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