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Surface Passivation of Boron-Diffused p-Type Silicon Surfaces With (1 0 0) and (1 1 1) Orientations by ALD Al 2 O 3 Layers

Date

Authors

Liang, Wensheng

Weber, Klaus

Suh, Dong Chul

Phang, Sieu Pheng

Yu, Jun X

McAuley, Andrew

Legg, Bridget

Publisher

IEEE Electron Devices Society

Abstract

Boron-diffused p+/n/p+ and undiffused silicon samples with (1 0 0) and (1 1 1) orientations passivated by aluminum oxide (Al2 O3) that is synthesized by atomic layer deposition (ALD) have been investigated. Emitter saturation current densities of ∼24, 2

Keywords

(1 0 0) and (1 1 1), Boron concentrations, Capacitance voltage measurements, Emitter saturation current density, Interface state density, Negative fixed charge, Surface orientation, Surface passivation, Aluminum, Boron, Deposition, Interfaces (materials), Atomic layer deposition (ALD) Al2O 3, boron emitter, passivation, solar cells

URI

http://hdl.handle.net/1885/27044

Collections

ANU Research Publications

Source

IEEE Journal of Photovoltaics

Type

Journal article

DOI

10.1109/JPHOTOV.2012.2235525

Restricted until

2037-12-31

Downloads

File

Description

01_Liang_Surface_Passivation_of_2013.pdf (3.31 MB)