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Effect of Stress on Impurity-free quantum well intermixing

Date

Authors

Deenapanray, Prakash

Jagadish, Chennupati

Publisher

Electrochemical Society Inc

Abstract

Impurity-free interdiffusion of GaAs/AlGaAs quantum wells was investigated for SiOx capping layers grown by plasma-enhanced chemical vapor deposition. Dielectric layers were deposited for various nitrous oxide flow rates, N(30 sccm ≤ N ≤ 710 sccm), wh

Keywords

Keywords: Chemical vapor deposition; Ellipsometry; Epitaxial growth; Fourier transform infrared spectroscopy; Heterojunctions; Impurities; Photoluminescence; Rapid thermal annealing; Rutherford backscattering spectroscopy; Semiconducting aluminum compounds; Semicon

URI

http://hdl.handle.net/1885/68290

Collections

ANU Research Publications

Source

Electrochemical and Solid-State Letters

Type

Journal article

DOI

10.1149/1.1339242

Restricted until

2037-12-31

Downloads

File

Description

01_Deenapanray_Effect_of_Stress_on_2001.pdf (67.49 KB)