Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs

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dc.contributor.authorKim, Taeseok
dc.contributor.authorPillai, Manoj R.
dc.contributor.authorAziz, Michael J.
dc.contributor.authorScarpulla, Michael A.
dc.contributor.authorDubon, Oscar D.
dc.contributor.authorYu, Kin M.
dc.contributor.authorBeeman, Jeffrey W.
dc.contributor.authorRidgway, Mark C.
dc.date.accessioned2015-09-17T02:19:41Z
dc.date.available2015-09-17T02:19:41Z
dc.date.issued2010
dc.date.updated2015-12-10T07:53:05Z
dc.description.abstractSome of the authors thank for the support of the Center for Nanoscale Systems (CNS) at Harvard University is acknowledged. Harvard-CNS is a member of the National Nanotechnology Infrastructure Network (NNIN), which is supported by the National Science Foundation under NSF award No. ECS-0335765. K. M. Yu and J. W. Beeman were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.
dc.description.sponsorshipSome of the authors thank for the support of the Center for Nanoscale Systems (CNS) at Harvard University is acknowledged. Harvard-CNS is a member of the National Nanotechnology Infrastructure Network (NNIN), which is supported by the National Science Foundation under NSF award No. ECS-0335765. K. M. Yu and J. W. Beeman were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15510
dc.publisherAmerican Institute of Physics
dc.rightsPublishers version/PDF may be used on author's personal website, institutional website or institutional repository http://www.sherpa.ac.uk/romeo/issn/0003-6951 Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at 10.1063/1.3457106
dc.sourceJournal of Applied Physics
dc.subjectIII-V semiconductors
dc.subjectsolidification
dc.subjectliquid crystals
dc.subjectreflectivity
dc.subjectmelting
dc.titleHeat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs
dc.typeJournal article
local.bibliographicCitation.issue1en_AU
local.bibliographicCitation.lastpage7
local.bibliographicCitation.startpage013508en_AU
local.contributor.affiliationKim, Taeseok, SunPower Corporation, United States of Americaen_AU
local.contributor.affiliationPillai, M R, Lawrence Berkeley National Laboratory, United States of Americaen_AU
local.contributor.affiliationAziz, Michael, Harvard University, United States of Americaen_AU
local.contributor.affiliationScarpulla, M A, University of California, United States of Americaen_AU
local.contributor.affiliationDubon, O D, University of California, United States of Americaen_AU
local.contributor.affiliationYu, Kin Man, Lawrence Livermore National Laboratory, United States of Americaen_AU
local.contributor.affiliationBeeman, J W, Lawrence Berkeley National Laboratory, United States of Americaen_AU
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, Research School of Physics and Engineering, Department of Electronic Materials Engineering, the Australian National Universityen_AU
local.contributor.authoruidRidgway, Mark C, u9001886en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020499en_AU
local.identifier.ariespublicationf2965xPUB527en_AU
local.identifier.citationvolume108en_AU
local.identifier.doi10.1063/1.3457106en_AU
local.identifier.scopusID2-s2.0-77955217913
local.identifier.thomsonID000280000400021
local.type.statusPublished Versionen_AU

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