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Deep Level Properties of Erbium Implanted Epitaxially Grown SiGe

Date

1999

Authors

Mamor, M
Auret, Francois D
Goodman, S
Brink, J
Hayes, M
Meyer, F
Vantomme, A
Langouche, G
Deenapanray, Prakash

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

We have used deep-level transient spectroscopy (DLTS) in an investigation of the electronic properties of defects introduced in n-Si0.96Ge0.04 during 180 keV erbium ion implantation (fluence -1×1010 cm-2 ). Five defects with discrete energy levels, rangi

Description

Keywords

Keywords: Band structure; Crystal defects; Deep level transient spectroscopy; Electronic properties; Epitaxial growth; Erbium; Heat transfer; Ion implantation; Photoluminescence; Semiconductor growth; Silicon germanide; Semiconducting silicon compounds DLTS; Erbium implantation; PL; Schottky diodes; SiGe

Citation

URI

http://hdl.handle.net/1885/93392

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

Downloads

File
Description
01_Mamor_Deep_Level_Properties_of_1999.pdf (121.65 KB)

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