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Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

Date

2017

Authors

Shrestha, Neelu
Kibel, Martyn H
Leech, Patrick W
Holland, A S
Reeves, G K
Ridgway, Mark C
Tanner, Phillip

Journal Title

Journal ISSN

Volume Title

Publisher

Cambridge Journals

Abstract

The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 1015 ions/cm2 for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10-6 Ω.cm2 at implant doses of 1013-1014 ions/cm2. Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface.

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/242612

Collections

ANU Research Publications

Source

MRS Advances

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1557/adv.2017.314

Restricted until

2099-12-31

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Description
01_Shrestha_Low_Energy_Ion_Implantation_2017.pdf (429.59 KB)

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