Nanoscale phase separation in ultrafast pulsed laser deposited arsenic trisulfide (As₂S₃) films and its effect on plasma etching

Abstract

We have observed nanoscale phase separation in amorphous arsenic trisulfide (As₂S₃)films produced by ultrafast pulsed laser deposition and its effect on the surface morphology of the film after plasma etching. When the film was etched in CF₄–O₂plasma, a grainy structure was observed on the surface. From Raman and x-ray photoelectron spectroscopies, we concluded that the grainy structure of the etchedsurfaces comes from the differential chemical attack between different phases in the film. Show more