Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

Abstract

The effects of intermixing of Al0.54Ga0.46As/GaAs/Al0.54Ga0.46A s QW enhanced by proton implantation and subsequent annealing have been investigated by PL and PR measurements. Comparing with as-grown QW, obvious blueshifts of all the transitions were observed. The H22 transition was found to be more sensitive to the implantation doses than that of H11. The experimental results are consistent with the theoretical results calculated by using the model of error function profile of Al composition. The results are fruitful to understand the potential profile after intermixing enhanced by proton implantation, and also to the application of implantation enhanced intermixing effects on devices. Show more