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Complementary resistive switching in niobium oxide-based resistive memory devices

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Date

2013

Authors

Liu, Xinjun
Sadaf, Sharif Md.
Park, Sangsu
Kim, Seonghyun
Cha, Euijun
Lee, Daeseok
Jung, Gun-Young
Hwang, Hyunsang

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

For the applications of resistive random access memory (RRAM), we study the complementary resistive switch (CRS) behavior of a bilayer Nb2O 5-x/NbOy RRAM. The CRS effect is explained by the redistribution of oxygen vacancies inside the two niobium oxide layers. Improved CRS effects were observed using W top electrode (TE) instead of Pt, which can be attributed to the oxygen barrier layer derived from a self-formed WO x layer between the W TE and the Nb2 O5-x oxide film. The niobium oxide-based CRS devices within a single memory cell can be directly integrated into a crossbar memory array without the need of extra diodes; this can significantly reduce the fabrication complexity.

Description

Keywords

Keywords: Complementary resistive switch (CRS); Crossbar arrays; Non-volatile memories; Resistive memories; Resistive random access memory; Niobium oxide; Oxide films; Platinum; Switching systems; Random access storage Complementary resistive switch (CRS); crossbar array; nonvolatile memory; resistive memory; resistive random access memory (RRAM)

Citation

URI

http://hdl.handle.net/1885/65776

Collections

ANU Research Publications

Source

IEEE Electron Device Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/LED.2012.2235816

Restricted until

2037-12-31

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