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Removal of Hydrogen and Deposition of Surface Charge During Rapid Thermal Annealing

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Date

2008

Authors

Kho, Teng Choon
McIntosh, Keith
Tan, Jason
Thomson, Andrew
Chen, Florence

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The submission of a hydrogenated oxide-passivated silicon wafer to a rapid thermal anneal (RTA) leads to a complicated change in effective lifetime τeff. Within seconds, τeff decreases rapidly before increasing to near its initial level, and then decrea

Description

Keywords

Baseplate, Effective lifetime, Hydrogen loss, Iso-propanols, Deposition, Hydrogen, Rapid thermal annealing, Silicon, Silicon oxides, Surface charge, Silicon wafers

Citation

URI

http://hdl.handle.net/1885/28702

Collections

ANU Research Publications

Source

Proceedings of the 33rd IEEE Photovoltaic Specialist Conference

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/PVSC.2008.4922678

Restricted until

2037-12-31

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Description
01_Kho_REMOVAL_OF_HYDROGEN_AND_2008.pdf (160.22 KB)

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