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Surface passivation attained by silicon dioxide grown at low temperature in nitric acid

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dc.contributor.authorGrant, Nicholas
dc.contributor.authorMcIntosh, Keith
dc.coverage.spatialHamburg Germany
dc.date.accessioned2015-12-10T22:41:30Z
dc.date.createdSeptember 21-24 2009
dc.date.issued2009
dc.date.updated2015-12-09T11:08:28Z
dc.identifier.isbn3936338256
dc.identifier.urihttp://hdl.handle.net/1885/57943
dc.publisherWIP-Renewable Energies
dc.relation.ispartofseriesEuropean Photovoltaic Solar Energy Conference 2009
dc.sourceProceedings of the 24th European Photovoltaic Solar Energy Conference
dc.titleSurface passivation attained by silicon dioxide grown at low temperature in nitric acid
dc.typeConference paper
local.bibliographicCitation.lastpage1679
local.bibliographicCitation.startpage1676
local.contributor.affiliationGrant, Nicholas, College of Engineering and Computer Science, ANU
local.contributor.affiliationMcIntosh, Keith, College of Engineering and Computer Science, ANU
local.contributor.authoruidGrant, Nicholas, u4488538
local.contributor.authoruidMcIntosh, Keith, u4249405
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090606 - Photonics and Electro-Optical Engineering (excl. Communications)
local.identifier.ariespublicationu4334215xPUB421
local.type.statusPublished Version

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