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Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells

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Date

2011

Authors

Fu, Lan
Lu, Hao Feng
Mokkapati, Sudha
Jolley, Greg
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE Photonics Society

Abstract

We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.

Description

Keywords

Keywords: Device characteristics; InGaAs/GaAs; Light trapping effects; Physical process; Plasmonic; Quantum dot solar cells; Self-assembled; Semiconductor quantum dots; Plasmons

Citation

URI

http://hdl.handle.net/1885/33500

Collections

ANU Research Publications

Source

Highly efficient color filter based on a subwavelength metal grating integrated with a dielectric monolayer

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/PHO.2011.6110590

Restricted until

2037-12-31

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Description
01_Fu_Plasmonic_light_trapping_2011.pdf (190.59 KB)

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