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Epitaxial growth of Sc2O3 films on Gd2O3-buffered Si substrates by pulsed laser deposition

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dc.contributor.authorPaulraj, Joseph
dc.contributor.authorWang, Rongping
dc.contributor.authorSellars, Matthew
dc.contributor.authorLuther-Davies, Barry
dc.date.accessioned2016-06-14T23:19:45Z
dc.date.issued2016
dc.date.updated2016-06-14T08:42:37Z
dc.identifier.issn0947-8396
dc.identifier.urihttp://hdl.handle.net/1885/103036
dc.publisherSpringer
dc.sourceApplied Physics A: Materials Science and Processing
dc.titleEpitaxial growth of Sc2O3 films on Gd2O3-buffered Si substrates by pulsed laser deposition
dc.typeJournal article
local.bibliographicCitation.issue422
local.contributor.affiliationPaulraj, Joseph, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSellars, Matthew, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLuther-Davies, Barry, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidPaulraj, Joseph, u4940413
local.contributor.authoruidWang, Rongping, u4219061
local.contributor.authoruidSellars, Matthew, u8810501
local.contributor.authoruidLuther-Davies, Barry, u7601418
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.absfor090600 - ELECTRICAL AND ELECTRONIC ENGINEERING
local.identifier.absfor091200 - MATERIALS ENGINEERING
local.identifier.ariespublicationU3488905xPUB13937
local.identifier.citationvolume122
local.identifier.doi10.1007/s00339-016-9968-z
local.identifier.scopusID2-s2.0-84961636988
local.type.statusPublished Version

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