Lazarevicite-type short-range ordering in ternary III-V nanowires
| dc.contributor.author | Schnedler, M. | |
| dc.contributor.author | Lefebvre, I | |
| dc.contributor.author | Xu, T. | |
| dc.contributor.author | Portz, V. | |
| dc.contributor.author | Patriarche, G. | |
| dc.contributor.author | Nys, J. | |
| dc.contributor.author | Plissard, Sebastien | |
| dc.contributor.author | Caroff, Philippe | |
| dc.contributor.author | Berthe, M. | |
| dc.contributor.author | Eisele, H. | |
| dc.contributor.author | Dunin-Borkowski, R.E. | |
| dc.date.accessioned | 2018-11-29T22:54:46Z | |
| dc.date.available | 2018-11-29T22:54:46Z | |
| dc.date.issued | 2016 | |
| dc.date.updated | 2018-11-29T08:02:21Z | |
| dc.description.abstract | Stabilizing ordering instead of randomness in alloy semiconductor materials is a powerful means to change their physical properties. We used scanning tunneling and transmission electron microscopies to reveal the existence of an unrecognized ordering in ternary III-V materials. The lazarevicite short-range order, found in the shell of InAs1−xSbx nanowires, is driven by the strong Sb-Sb repulsion along ⟨100⟩ atomic chains during their incorporation on unreconstructed {110} sidewalls. Its spontaneous formation under group-III-rich conditions of growth offers the prospect to broaden the limited classes of ordered structures occurring in III-V semiconductor alloys. | |
| dc.format.mimetype | application/pdf | en_AU |
| dc.identifier.issn | 1098-0121 | |
| dc.identifier.uri | http://hdl.handle.net/1885/152912 | |
| dc.publisher | American Physical Society | |
| dc.source | Physical Review B: Condensed Matter and Materials | |
| dc.title | Lazarevicite-type short-range ordering in ternary III-V nanowires | |
| dc.type | Journal article | |
| dcterms.accessRights | Open Access | en_AU |
| local.bibliographicCitation.issue | 19 | |
| local.contributor.affiliation | Schnedler, M., Peter Grunberg Institut | |
| local.contributor.affiliation | Lefebvre, I, CRNS, UMR | |
| local.contributor.affiliation | Xu, T., Shanghai University | |
| local.contributor.affiliation | Portz, V., Peter Grunberg Institut | |
| local.contributor.affiliation | Patriarche, G., Universite Paris-Saclay | |
| local.contributor.affiliation | Nys, J., Institut d’Electronique | |
| local.contributor.affiliation | Plissard, Sebastien, Institut d’Electronique, de Microelectronique et de Nanotechnologie | |
| local.contributor.affiliation | Caroff, Philippe, College of Science, ANU | |
| local.contributor.affiliation | Berthe, M., UMR National Center for Scientific Research | |
| local.contributor.affiliation | Eisele, H., Avenue du Colonel Roche | |
| local.contributor.affiliation | Dunin-Borkowski, R.E., Peter Grunberg Institut | |
| local.contributor.authoruid | Caroff, Philippe, u5309137 | |
| local.description.notes | Imported from ARIES | |
| local.identifier.absfor | 100706 - Nanofabrication, Growth and Self Assembly | |
| local.identifier.ariespublication | a383154xPUB4830 | |
| local.identifier.citationvolume | 94 | |
| local.identifier.doi | 10.1103/PhysRevB.94.195306 | |
| local.identifier.scopusID | 2-s2.0-84995390601 | |
| local.identifier.thomsonID | 000387887800007 | |
| local.type.status | Published Version |
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