High-dose ion implantation into GaN

Abstract

The structural characteristics of wurtzite GaN films bombarded up to high ion doses are studied by a combination of Rutherford backscattering/channeling spectrometry, transmission electron microscopy, and atomic force microscopy. We concentrate on (i) the nature of structural disorder and the consequences of anomalous erosion observed in GaN exposed to ion bombardment at elevated temperatures and (ii) correlation between surface roughness and the development of a porous structure during implantation at liquid nitrogen temperature. These anomalous morphological changes observed in GaN may have significant implications for the application of ion implantation in the fabrication of GaN-based devices.