Silicon liquid phase epitaxy for epilift solar cells

dc.contributor.authorWeber, K. Jen_US
dc.contributor.authorBlakers, Andrewen_US
dc.contributor.authorStocks, Matthewen_US
dc.contributor.authorThompson, Aen_US
dc.contributor.authorWeber, K. Jen_AU
dc.contributor.authorStocks, Matthewen_AU
dc.contributor.authorThompson, Aen_AU
dc.coverage.spatialOsaka, Japanen_US
dc.coverage.temporalMay 11-18en_US
dc.date.accessioned2003-07-24en_US
dc.date.accessioned2004-05-19T13:00:08Zen_US
dc.date.accessioned2011-01-05T08:50:29Z
dc.date.available2004-05-19T13:00:08Zen_US
dc.date.available2011-01-05T08:50:29Z
dc.date.created2003en_US
dc.date.issued2003en_US
dc.description.abstractSilicon liquid phase epitaxy (LPE) is a suitable silicon deposition process for the fabrication of thin film silicon solar cells. In this paper we discuss the design and operation of a batch LPE system which is a first step towards mass production. The issue of melt cost can be addressed by efficient recovery of the melt and by switching to more widely available metals, such as tin. Layers grown by the epilift technique using a tin melt have displayed excellent coverage and morphology. Epitaxial layers can be detached by both chemical and mechanical means, with only minimal consumption of the substrate material.en_US
dc.format.extent130123 bytesen_US
dc.format.extent370 bytesen_US
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/octet-streamen_US
dc.identifier.urihttp://hdl.handle.net/1885/40825en_US
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/1885/40825
dc.language.isoen_AUen_US
dc.relation.ispartofseries3rd World Conference of Photovoltaic Solar Energy Conversionen_US
dc.subjectsilicon liquid phase epitaxyen_US
dc.subjectsilicon solar cellsen_US
dc.subjectepitaxial reactor designen_US
dc.subjectepitaxial layer growthen_US
dc.titleSilicon liquid phase epitaxy for epilift solar cellsen_US
dc.typeConference paperen_US
local.description.refereednoen_US
local.identifier.citationyear2003en_US
local.identifier.eprintid1772en_US
local.rights.ispublishedyesen_US

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