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Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

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dc.contributor.authorNilsson, Henrik A.
dc.contributor.authorCaroff, Philippe
dc.contributor.authorLind, Erik
dc.contributor.authorPistol, Mats-Erik
dc.contributor.authorThelander, Claes
dc.contributor.authorWernersson, Lars-Erik
dc.date.accessioned2015-09-25T01:18:25Z
dc.date.available2015-09-25T01:18:25Z
dc.date.issued2011-09-21
dc.date.updated2016-02-24T09:34:50Z
dc.description.abstractWe present temperature dependent electrical measurements on n-type InAs/InSb nanowireheterostructurefield-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgapInSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction.
dc.description.sponsorshipThis work was carried out within the Nanometer Structure Consortium at Lund University and was supported by the Swedish Research Council (VR), the Swedish Foundation for Strategic Research (SSF), and the Knut and Alice Wallenberg Foundation.en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15701
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 25/09/15). Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Nilsson, Henrik A., et al. "Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors." Journal of Applied Physics 110.6 (2011): 064510.) and may be found at https://doi.org/10.1063/1.3633742
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Band to band tunneling; Barrier heights; Electrical measurement; Heterostructure field-effect transistors; Heterostructure junctions; InAs; Narrow band gap; P-Type conduction; Temperature dependent; Voltage drop; Energy gap; Impact ionization; Indium anti
dc.titleUnipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
dc.typeJournal article
local.bibliographicCitation.issue6en_AU
local.bibliographicCitation.lastpage4
local.bibliographicCitation.startpage064510en_AU
local.contributor.affiliationNilsson, H, Lund University, Swedenen_AU
local.contributor.affiliationCaroff, Philippe, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationLind, Erik, Lund University, Swedenen_AU
local.contributor.affiliationPistol, Mats-Erik, Lund University, Swedenen_AU
local.contributor.affiliationThelander, Claes, Lund University, Swedenen_AU
local.contributor.affiliationWernersson, Lars-Erik, Lund University, Swedenen_AU
local.contributor.authoruidu5309137en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.absfor100706en_AU
local.identifier.ariespublicationf5625xPUB7432en_AU
local.identifier.citationvolume110en_AU
local.identifier.doi10.1063/1.3633742en_AU
local.identifier.scopusID2-s2.0-80053550455
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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