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Photoluminescence response of ion-implanted silicon

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dc.contributor.authorHarding, Ruth E.
dc.contributor.authorDavies, Gordon
dc.contributor.authorHayama, S.
dc.contributor.authorColeman, P. G.
dc.contributor.authorBurrows, C. P.
dc.contributor.authorWong-Leung, Jennifer
dc.date.accessioned2015-11-03T03:50:46Z
dc.date.available2015-11-03T03:50:46Z
dc.date.issued2006-11-01
dc.date.updated2015-12-08T02:45:31Z
dc.description.abstractThe photoluminescence intensity from ion-implanted silicon can be quenched by the radiation damage implicit in the implantation.Annealing is then required before the intensity of the luminescence from a defect center is approximately proportional to the concentration of that center. Data from positron annihilation and photoluminescence experiments establish that severe quenching of the luminescence occurs when the mean separation of the small vacancy clusters is less than ∼30 atomic spacings, and the authors map out where, in the annealing and implantation phase space, the luminescence intensity is expected to be approximately proportional to the concentration of the optical centers.
dc.description.sponsorshipThis work was supported by EPSRC Grant No. GR/ R10820/01 and by the EU Co-ordination Action programme CADRES. One of the authors J.W.-L. acknowledges the support of the Australian Research Council.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16242
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/11/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2378402
dc.sourceApplied Physics Letters
dc.subjectKeywords: Annealing; Ion implantation; Photoluminescence; Positron annihilation spectroscopy; Quenching; Radiation damage; Atomic spacings; Ion-implanted silicon; Luminescence intensity; Photoluminescence response; Semiconducting silicon
dc.titlePhotoluminescence response of ion-implanted silicon
dc.typeJournal article
local.bibliographicCitation.issue18en_AU
local.bibliographicCitation.startpage181917en_AU
local.contributor.affiliationHarding, Ruth E, King's College London, United Kingdomen_AU
local.contributor.affiliationDavies, G, King's College London, United Kingdomen_AU
local.contributor.affiliationHayama, S, King's College London, United Kingdomen_AU
local.contributor.affiliationColeman, P G , University of Bath , United Kingdomen_AU
local.contributor.affiliationBurrows, C P , University of Bath , United Kingdomen_AU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu9607716en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.absfor091299en_AU
local.identifier.absfor090608en_AU
local.identifier.ariespublicationu4047546xPUB3en_AU
local.identifier.citationvolume89en_AU
local.identifier.doi10.1063/1.2378402en_AU
local.identifier.scopusID2-s2.0-33750738094
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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