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Growth behavior of epitaxial semiconductor axial nanowire heterostructures

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dc.contributor.authorZou, Jinen_AU
dc.contributor.authorPaladugu, Mohanchanden_AU
dc.contributor.authorGuo, Yi Nen_AU
dc.contributor.authorZhang, Xinen_AU
dc.contributor.authorAuchterlonie, Graeme Jen_AU
dc.contributor.authorJoyce, Hannah Jen_AU
dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorKim, Yongen_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialSydney Australia
dc.date.accessioned2015-12-10T21:56:05Z
dc.date.createdJuly 28-August 1 2008
dc.date.issued2008
dc.date.updated2016-02-24T10:00:18Z
dc.description.abstractIn this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these
dc.identifier.isbn9781424427178
dc.identifier.urihttp://hdl.handle.net/1885/39254
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008)
dc.sourceProceedings of 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008)
dc.source.urihttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4802079&isnumber=4802062
dc.subjectKeywords: Axial growths; Epitaxy; GaAs; Growth behaviors; Heterostructues; InAs; Misfit strain relaxations; Nanowire heterostructures; Nucleation and growth; Vapor-liquid-solid; Vapor-liquid-solid mechanisms; Crystal growth; Crystallization; Electric wire; Gallium Crystal growth; Epitaxy; Heterostructues; Nanowires; Nucleation and growth; Vapor-liquid-solid
dc.titleGrowth behavior of epitaxial semiconductor axial nanowire heterostructures
dc.typeConference paper
local.bibliographicCitation.lastpage74
local.bibliographicCitation.startpage71
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationPaladugu, Mohanchand, University of Queensland
local.contributor.affiliationGuo, Yi N , University of Queensland
local.contributor.affiliationZhang, Xin, University of Queensland
local.contributor.affiliationAuchterlonie, Graeme J , University of Queensland
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Yong, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidJoyce, Hannah J, u4193607
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.contributor.authoruidKim, Yong, u4233336
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu3488905xPUB174
local.identifier.doi10.1109/COMMAD.2008.4802094
local.identifier.scopusID2-s2.0-64849108226
local.type.statusPublished Version

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