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Internal gain in Er-doped As₂S₃ chalcogenide planar waveguides

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Date

2015-02-24

Authors

Yan, Kunlun
Vu, Khu
Madden, Steve

Journal Title

Journal ISSN

Volume Title

Publisher

Optical Society of America

Abstract

Low-loss erbium-doped As₂S₃ planar waveguides are fabricated by cothermal evaporation and plasma etching. Internal gain in the telecommunications band is demonstrated for the first time in any chalcogenide glass and additionally in a thin film planar waveguide amplifier configuration.

Description

Keywords

Keywords: Chalcogenides; Erbium; Optical waveguides; Plasma etching; Waveguides; Chalcogenide glass; Co-thermal evaporation; Er-doped; Erbium doped; Low-loss; Planar waveguides

Citation

URI

http://hdl.handle.net/1885/13283

Collections

ANU Research Publications

Source

Optics letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1364/OL.40.000796

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Funding information: This research was supported by the Australian Research Council Centre of Excellence for Ultrahigh bandwidth Devices for Optical Systems, CUDOS, (project number CE110001018).

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