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Impurity gettering by silicon nitride films: kinetics, mechanisms and simulation

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Date

2021

Authors

Le, Tien
Hameiri, Ziv
Macdonald, Daniel
Liu, AnYao

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

The mechanisms behind the gettering effect of silicon nitride films for removing iron impurities in silicon are investigated in this study. The silicon nitride films are from plasma-enhanced chemical vapor deposition (PECVD). By monitoring the iron reduction kinetics in the silicon wafer bulk during cumulative anneals, it is found that silicon nitride gettering takes place mainly via a segregation mechanism with an activation energy of 0.9±0.1 eV for the investigated PECVD silicon nitride film.

Description

Keywords

gettering, iron, segregation, silicon nitride, activation energy

Citation

URI

http://hdl.handle.net/1885/317234

Collections

ANU Research Publications

Source

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/PVSC43889.2021.9518614

Restricted until

2099-12-31

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Impurity_gettering_by_silicon_nitride_films_kinetics_mechanisms_and_simulation.pdf (1.49 MB)

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