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Gettering of Pd to implantation-induced nanocavities in Si

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Date

2003-08-04

Authors

Brett, D. A.
de M. Azevedo, G.
Llewellyn, D. J.
Ridgway, M. C.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics

Abstract

The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×10¹³ to 1×10¹⁵ cm¯² and annealing temperatures ranging from 750 to 1050 °C was investigated using Rutherford backscattering and cross-sectional transmission electron microscopy. For a given annealing temperature, the gettering efficiency increased as the dose decreased. For a given dose, maximum gettering efficiency was achieved at the intermediate temperatures studied. Competition between silicide formation and nanocavity gettering limited gettering efficiency.

Description

Keywords

Keywords: Annealing; Ion implantation; Palladium; Rutherford backscattering spectroscopy; Transmission electron microscopy; Nanocavity gettering; Semiconducting silicon

Citation

URI

http://hdl.handle.net/1885/15791

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.1597424

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