Gettering of Pd to implantation-induced nanocavities in Si
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Brett, D. A.
de M. Azevedo, G.
Llewellyn, D. J.
Ridgway, M. C.
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American Institute of Physics
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The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×10¹³ to 1×10¹⁵ cm¯² and annealing temperatures ranging from 750 to 1050 °C was investigated using Rutherford backscattering and cross-sectional transmission electron microscopy. For a given annealing temperature, the gettering efficiency increased as the dose decreased. For a given dose, maximum gettering efficiency was achieved at the intermediate temperatures studied. Competition between silicide formation and nanocavity gettering limited gettering efficiency.
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Applied Physics Letters
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