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Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon

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dc.contributor.authorLim, Bianca
dc.contributor.authorLiu, An
dc.contributor.authorMacdonald, Daniel
dc.contributor.authorBothe, Karsten
dc.contributor.authorSchmidt, Jan
dc.date.accessioned2015-11-12T01:19:14Z
dc.date.available2015-11-12T01:19:14Z
dc.date.issued2009-12-10
dc.date.updated2016-02-24T10:37:15Z
dc.description.abstractThe boron-oxygen recombination center responsible for the light-induced degradation of Czochralski silicon solar cells can be permanently deactivated by illumination at elevated temperature. In this study, we examine the impact of dopant compensation on the deactivation process. The experimental results show that the deactivation rate depends inversely on the total boron concentration instead of the net doping concentration, suggesting that boron is directly involved in the deactivation process. A linear dependence of the activation energy on the total boron concentration further supports this conclusion.
dc.description.sponsorshipFunding was provided by the State of Lower Saxony and the DAAD/Go8 Australia Germany Joint Research Cooperation Scheme.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16481
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 12/11/15). Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.3272918
dc.sourceApplied Physics Letters
dc.subjectKeywords: Boron concentrations; Boron-oxygen; Crystalline silicons; Czochralski silicon; Deactivation process; Deactivation rate; Doping concentration; Elevated temperature; Light-induced degradation; Linear dependence; Activation energy; Boron; Doping (additives);
dc.titleImpact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon
dc.typeJournal article
local.bibliographicCitation.issue23en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage232109en_AU
local.contributor.affiliationLim, Bianca, Institut fur Solarenergieforschung Hameln (ISFH), Germanyen_AU
local.contributor.affiliationLiu, An Yao, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationBothe, Karsten, Institute for Solar Energy Research Hameln (ISFH), Germanyen_AU
local.contributor.affiliationSchmidt, Jan , Institute for Solar Energy Research Hameln (ISFH), Germanyen_AU
local.contributor.authoruidu4393070en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor090605en_AU
local.identifier.ariespublicationu4137410xPUB26en_AU
local.identifier.citationvolume95en_AU
local.identifier.doi10.1063/1.3272918en_AU
local.identifier.scopusID2-s2.0-71949084534
local.identifier.thomsonID000272627700041
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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