Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films

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dc.contributor.authorBiju, Kuyyadi P.
dc.contributor.authorLiu, Xinjun
dc.contributor.authorKim, Seonghyun
dc.contributor.authorJung, Seungjae
dc.contributor.authorPark, Jubong
dc.contributor.authorHwang, Hyunsang
dc.date.accessioned2015-12-08T22:45:59Z
dc.date.issued2011
dc.date.updated2016-02-24T11:23:59Z
dc.description.abstractReversible clockwise and counter-clockwise resistive switching in a Pt/graded WOx /W stack is reported. Two stable switching modes with opposite switching polarity and different electrical characteristics are found to coexist in the same memory cell. Clockwise switching shows filamentary characteristics that lead to relatively faster switching with excellent retention at high temperature. Counter-clockwise switching exhibits homogeneous conduction with slower switching and moderate retention. The field-induced switching reversal might be due to inhomogeneous expansion of W during thermal oxidation. Our results provide a clue to modulate the switching type in Pt/WOx /W memory cells. (
dc.identifier.issn1862-6254
dc.identifier.urihttp://hdl.handle.net/1885/37946
dc.publisherWiley-VCH Verlag GMBH
dc.sourcePhysica Status Solidi: Rapid Research Letters
dc.subjectKeywords: Counter-clockwise; Electrical characteristic; Filamentary switching; Graded WO x ; High temperature; Homogeneous switching; Memory cell; Memory performance; Resistive switching; Reversible effects; Switching modes; Thermal oxidation; Semiconducto Filamentary switching; Graded WOx; Homogeneous switching; Resistive switching; Switching polarity
dc.titleCoexistence of filamentary and homogeneous resistive switching in graded WOx thin films
dc.typeJournal article
local.bibliographicCitation.issue3
local.bibliographicCitation.lastpage91
local.bibliographicCitation.startpage89
local.contributor.affiliationBiju, Kuyyadi P., Gwangju Institute of Science and Technology
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Seonghyun, Gwangju Institute of Science and Technology
local.contributor.affiliationJung, Seungjae, Gwangju Institute of Science and Technology
local.contributor.affiliationPark, Jubong, Gwangju Institute of Science and Technology
local.contributor.affiliationHwang, Hyunsang, Gwangju Institute of Science and Technology
local.contributor.authoruidLiu, Xinjun, u5361480
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091200 - MATERIALS ENGINEERING
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationu4860843xPUB155
local.identifier.citationvolume5
local.identifier.doi10.1002/pssr.201004455
local.identifier.scopusID2-s2.0-79952217793
local.identifier.thomsonID000288178800001
local.type.statusPublished Version

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