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Mechanical deformation of InP and GaAs by spherical indentation

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dc.contributor.authorBradby, J. E.
dc.contributor.authorWilliams, J. S.
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorSwain, M. V.
dc.contributor.authorMunroe, P.
dc.date.accessioned2015-10-12T03:19:42Z
dc.date.available2015-10-12T03:19:42Z
dc.date.issued2001-05-21
dc.date.updated2015-12-10T11:09:23Z
dc.description.abstractThe mechanical deformation by spherical indentation of both crystalline InP and GaAs was characterized using cross-sectional transmission electron microscopy (XTEM) and atomic force microscopy. All load–unload curves show a discontinuity (or “pop in”) during loading. Slip bands oriented along {111} planes are visible in XTEM micrographs from residual indentations in both materials and no evidence of any phase transformations was found. Higher load indentations (35 mN for InP and 50 mN for GaAs) also revealed subsurface cracking. In contrast no cracking was found beneath a 25 mN InP indent although the hardness and modulus data are almost identical to those of the cracked sample. The subsurface cracks are thought to be nucleated by high stress concentrations caused by dislocation pileup.
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15876
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 12/10/15). Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1372207
dc.sourceApplied Physics Letters
dc.titleMechanical deformation of InP and GaAs by spherical indentation
dc.typeJournal article
local.bibliographicCitation.issue21en_AU
local.bibliographicCitation.lastpage3237
local.bibliographicCitation.startpage3235en_AU
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationSwain, Michael Vincent, University of Sydney, Australiaen_AU
local.contributor.affiliationMunroe, Paul, University of New South Wales, Australiaen_AU
local.contributor.authoruidu9908195en_AU
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor020204en_AU
local.identifier.ariespublicationMigratedxPub1681en_AU
local.identifier.citationvolume78en_AU
local.identifier.doi10.1063/1.1372207en_AU
local.identifier.scopusID2-s2.0-0039569466
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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