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Strong Hot Carrier Effects in Single Nanowire Heterostructures

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Date

2019-06-26

Authors

Abbasian Shojaei, Iraj
Linser, Samuel
Jnawali, Giriraj
Wickramasuriya, N.
Jackson, Howard E.
Smith, Leigh M.
Kargar, Fariborz
Balandin, Alexander A.
yuan, xiaoming
Caroff, Philippe

Journal Title

Journal ISSN

Volume Title

Publisher

American Chemical Society

Abstract

We use transient Rayleigh scattering to study the thermalization of hot photoexcited carriers in single GaAs0.7Sb0.3/InP nanowire heterostructures. By comparing the energy loss rate in single core-only GaAs0.7Sb0.3 nanowires which do not show substantial hot carrier effects with the core–shell nanowires, we show that the presence of an InP shell substantially suppresses the longitudinal optical phonon emission rate at low temperatures which then leads to strong hot carrier effects.

Description

Keywords

Hot carrier effects, hot phonons, carrier thermalization

Citation

URI

http://hdl.handle.net/1885/205673

Collections

ANU Research Publications

Source

Nano Letters

Type

Journal article

Book Title

Entity type

Access Statement

Open Access

License Rights

DOI

10.1021/acs.nanolett.9b01345

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1810.12516.pdf (939.68 KB)
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