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Twinning superlattice formation in GaAs nanowires

Date

Authors

Burgess, Timothy

Breuer, Steffan

Caroff, Philippe

Wong-Leung, Jennifer

Gao, Qiang

Jagadish, Chennupati

Tan, Hark Hoe

Publisher

American Chemical Society

Abstract

Semiconductor nanowires have proven a versatile platform for the realization of novel structures unachievable by traditional planar epitaxy techniques. Among these, the periodic arrangement of twin planes to form twinning superlattice structures has gener

Keywords

Keywords: Diameter dependences; II-IV semiconductors; Linear relationships; Semiconductor nanowire; Super-lattice structures; Superlattice formation; Twin planes; Zinc-blende; Crystal structure; Gallium arsenide; Semiconducting gallium; Superlattices; Zinc sulfide; crystal structure; gallium arsenide; III-V semiconductors; nanowire; superlattice; twin planes; zincblende

URI

http://hdl.handle.net/1885/74945

Collections

ANU Research Publications

Source

ACS Nano

Type

Journal article

DOI

10.1021/nn403390t

Restricted until

2037-12-31

Downloads

File

Description

01_Burgess_Twinning_superlattice_2013.pdf (1.71 MB)