Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Date
2000
Authors
Deenapanray, Prakash
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
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Volume Title
Publisher
Electrochemical Society Inc
Abstract
Plasma-enhanced chemical vapor deposition of SiO2 at temperatures below 300 °C was used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue shifts of up to approximately 200 meV were observed while still maintaining cl
Description
Keywords
Keywords: Annealing; Ellipsometry; Fourier transform infrared spectroscopy; Low temperature properties; Plasma enhanced chemical vapor deposition; Porosity; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor quantum wells; Silica; Qua
Citation
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Source
Electrochemical and Solid-State Letters
Type
Journal article
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2037-12-31