Phase transformations induced in relaxed amorphous silicon by indentation at room temperature

dc.contributor.authorHaberl, Bianca
dc.contributor.authorBradby, J. E.
dc.contributor.authorSwain, M. V.
dc.contributor.authorWilliams, J. S.
dc.contributor.authorMunroe, P.
dc.date.accessioned2015-10-08T04:10:26Z
dc.date.available2015-10-08T04:10:26Z
dc.date.issued2004-12-06
dc.date.updated2015-12-12T08:16:52Z
dc.description.abstractThe deformation behavior of self-ion-implanted amorphous-Si (a-Si) has been studied using spherical nanoindentation in both relaxed (annealed) and unrelaxed (as-implanted) a-Si. Interestingly, phase transformations were clearly observed in the relaxed state, with the load–unload curves from these samples displaying characteristic discontinuities and cross-sectional transmission electron microscopy images indicating the presence of high-pressure crystalline phases Si-III and Si-XII following pressure release. Thus, an amorphous to crystalline phase transformation has been induced by indentation at room temperature. In contrast, no evidence of a phase transformation was observed in unrelaxed a-Si, which appeared to deform via plastic flow of the amorphous phase. Furthermore, in situ electrical measurements clearly indicate the presence of a metallic Si phase during loading of relaxed a-Si but no such behavior was observed for unrelaxed a-Si.
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15815
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 8/10/15). Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1832757
dc.sourceApplied Physics Letters
dc.subjectKeywords: Low-density amorphous phases; Nanoindentation; Room temperature; Unloading rates; Curve fitting; Deformation; High pressure effects; Indentation; Ion implantation; Phase transitions; Plastic flow; Amorphous silicon
dc.titlePhase transformations induced in relaxed amorphous silicon by indentation at room temperature
dc.typeJournal article
local.bibliographicCitation.issue23en_AU
local.bibliographicCitation.lastpage5561
local.bibliographicCitation.startpage5559en_AU
local.contributor.affiliationHaberl, Bianca, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationSwain, M V, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationMunroe, Paul, University of New South Wales, Australiaen_AU
local.contributor.authoremailjodie.bradby@anu.edu.au
local.contributor.authoruidu4284509en_AU
local.contributor.authoruidu9908195
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor090699en_AU
local.identifier.ariespublicationMigratedxPub15807en_AU
local.identifier.citationvolume85en_AU
local.identifier.doi10.1063/1.1832757en_AU
local.identifier.scopusID2-s2.0-12844268254
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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