Fabrication of solar cells using the Epilift technique

dc.contributor.authorStocks, Matthewen_AU
dc.contributor.authorWeber, K. Jen_AU
dc.contributor.authorBlakers, Andrewen_AU
dc.coverage.spatialOsaka, Japan
dc.coverage.temporalMay 11-18en_AU
dc.date.accessioned2003-07-24en_US
dc.date.accessioned2004-05-19T13:00:00Zen_US
dc.date.accessioned2011-01-05T08:52:41Z
dc.date.available2004-05-19T13:00:00Zen_US
dc.date.available2011-01-05T08:52:41Z
dc.date.created2003en_AU
dc.date.issued2003en_AU
dc.description.abstractThe Epilift technique allows the growth and detachment of good quality, single crystal silicon films on silicon substrates. Since the substrates only act as a growth template, they can be re-used, offering the potential for substantial cost reductions. However, the processing of solar cells on Epilift layers introduces significant challenges as a result of the fact that the layers are thin and perforated. We have obtained good results by performing most of the processing prior to detachment of the layer from the substrate. An interdigitated rear contact design created by laser patterning allows the specific features of epilift layers to be optimally exploited. Individual 1cm2 cells with a SiO2 antireflection coating have displayed efficiencies in excess of 13%, while a 50cm2 mini-module has displayed an efficiency of 10.9%.en_AU
dc.format.extent91499 bytesen_AU
dc.format.extent363 bytesen_AU
dc.format.mimetypeapplication/pdfen_AU
dc.format.mimetypeapplication/octet-streamen_AU
dc.identifier.urihttp://hdl.handle.net/1885/40824en_AU
dc.language.isoen_AUen_AU
dc.relation.ispartofseries3rd World Conference of Photovoltaic Solar Energy Conversionen_AU
dc.rightsAuthor/s retain copyrighten_AU
dc.subjectEpilift techniqueen_AU
dc.subjectepitaxial growthen_AU
dc.subjectcell designen_AU
dc.subjectcell processingen_AU
dc.subjectcell mountingen_AU
dc.titleFabrication of solar cells using the Epilift techniqueen_AU
dc.typeConference paperen_AU
local.description.refereednoen_US
local.identifier.citationyear2003en_US
local.identifier.eprintid1771en_US
local.rights.ispublishedyesen_US

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