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Room-Temperature Preperation of InGaAsN Quantum Dot Lasers Grown by MOCVD

Date

2005

Authors

Gao, Qiang
Buda, Manuela
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Electrochemical Society Inc

Abstract

An InGaAsN single-layer quantum dot (QD) laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at room temperature. The evidence for QD-related absorption was obtained from the comparison of photocurrent spectra between a reference InGaAs QW and the InGaAsN QD structures.

Description

Keywords

Keywords: Atomic force microscopy; Current density; Electroluminescence; Growth (materials); Metallorganic chemical vapor deposition; Photocurrents; Semiconductor lasers; Semiconductor quantum dots; Lasing spectrum; Nonradiative recombination; Room temperature; Thr

Citation

URI

http://hdl.handle.net/1885/82494

Collections

ANU Research Publications

Source

Electrochemical and Solid-State Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1149/1.1848293

Restricted until

2037-12-31

Downloads

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Description
01_Gao_Room-Temperature_Preperation_2005.pdf (358.36 KB)

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