Defects in silicon nanowires

Abstract

Defects in siliconnanowires have been investigated using the electron spin resonance(ESR) method. The ESR signals consist of three features: a strong resonance at g=2.00249, a weak line at g=2.00048, and a broad feature at g=2.00541. From the saturation behavior and oxidation-related and temperature dependence analysis, we ascribe that the strong resonance corresponds to the EX center and the weak line to the well-assigned E′ center. We argue that the assignment of the broad feature to Pb centers [A. Baumer et al., Appl. Phys. Lett.85, 943 (2004)] is oversimplified, and its physical origins may include dangling bonds in amorphous silicon. Show more