Reduced threshold current in NbO 2 selector by engineering device structure
Date
2014
Authors
Liu, Xinjun
Nandi, Sanjoy
Venkatachalam, Dinesh
Belay, Kidane
Song, Sannian
Elliman, Robert
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Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
The leakage current scaling issues for NbO2 selector devices are investigated. By introducing a rough Pt bottom electrode (BE) (RMS roughness ∼2.5 nm) and inserting a 20-nm-thick dielectric layer (Nb2O5 and HfO2) between the BE and NbO2 layer, we show t
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IEEE Electron Device Letters
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Journal article
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2037-12-31
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