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Reduced threshold current in NbO 2 selector by engineering device structure

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Date

2014

Authors

Liu, Xinjun
Nandi, Sanjoy
Venkatachalam, Dinesh
Belay, Kidane
Song, Sannian
Elliman, Robert

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The leakage current scaling issues for NbO2 selector devices are investigated. By introducing a rough Pt bottom electrode (BE) (RMS roughness ∼2.5 nm) and inserting a 20-nm-thick dielectric layer (Nb2O5 and HfO2) between the BE and NbO2 layer, we show t

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/75571

Collections

ANU Research Publications

Source

IEEE Electron Device Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/LED.2014.2344105

Restricted until

2037-12-31

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01_Liu_Reduced_threshold_current_in_2014.pdf (805.32 KB)

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