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Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler

Date

2001

Authors

Gal, Michael
Wengler, M
Ilyas, S
Rofii, I
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

We describe an easy-to-use, computer-controlled optical method capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si-implanted GaAs of various ion energies and ion doses. The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95), and the observed channelling effects not included in the TRIM calculations.

Description

Keywords

Keywords: Computer control; Ion implantation; Radiation damage; Silicon; Automated optical profiler; Computer-controlled optical method; Semiconducting gallium arsenide

Citation

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/S0168-583X(00)00407-9

Restricted until

2037-12-31