Optical properties and morphology of InAs ∕ InP (113)B surface quantum dots

Nakkar, A.; Folliot, H.; Le Corre, A.; Doré, F.; Alghoraibi, I.; Labbé, C.; Elias, G.; Loualiche, S.; Pistol, M.-E.; Caroff, P.; Ellström, C.

Optical properties and morphology of InAs ∕ InP (113)B surface quantum dots

Date

2008-06-12

Authors

Nakkar, A.

Folliot, H.

Le Corre, A.

Doré, F.

Alghoraibi, I.

Labbé, C.

Elias, G.

Loualiche, S.

Pistol, M.-E.

Caroff, P.

Publisher

American Institute of Physics

Abstract

We report on long-wavelength photoluminescence(PL) emission at room temperature from self-organized InAssurfacequantum dotsgrown by gas-source molecular beam epitaxy on a GaInAsP∕InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surfacequantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k⋅p theory in the envelope function approximation.