Optical Evaluation of Silicon Wafers With Rounded Rear Pyramids

dc.contributor.authorMcIntosh, Keith
dc.contributor.authorZin, Ngwe Soe
dc.contributor.authorNguyen, Hieu
dc.contributor.authorStocks, Matthew
dc.contributor.authorFranklin, Evan
dc.contributor.authorFong, Kean
dc.contributor.authorKho, Teng
dc.contributor.authorChong, Teck
dc.contributor.authorWang, Er-Chien
dc.contributor.authorRatcliff, Tom
dc.contributor.authorMacDonald, Daniel
dc.contributor.authorBlakers, Andrew
dc.date.accessioned2020-12-20T20:57:30Z
dc.date.available2020-12-20T20:57:30Z
dc.date.issued2017
dc.date.updated2020-11-23T10:54:32Z
dc.description.abstractWe investigate the light trapping in Si wafers that are textured with conventional random pyramids on their front surface and rounded random pyramids on their rear. It is well established that rounding the pyramids leads to better surface passivation, but whether or not it improves light trapping depends on the cell structure. In this paper, we apply ray tracing, spectrophotometry, and photoluminescence spectroscopy (PLS) to understand and quantify how rounding the rear pyramids might affect the light trapping in back-contact solar cells. We describe how rounding the pyramids leads to two competing optical effects: 1) reduced absorption in the rear films and 2) reduced scattering from the rear texture. The first effect improves light trapping whereas the latter degrades it. We show how the influence of each effect depends on wavelength and how they can be discerned (but not easily quantified) in reflectance curves. With PLS measurements, we conclude that for our sample structure and etch solution, the generation current is approximately constant for etch durations less than ~60 s, and decreases significantly as the etch duration increases. Thus, by limiting the duration of the rounding etch, superior surface passivation can be attained without degrading the light trapping.
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/218287
dc.language.isoen_AUen_AU
dc.publisherIEEE
dc.sourceIEEE Journal of Photovoltaics
dc.titleOptical Evaluation of Silicon Wafers With Rounded Rear Pyramids
dc.typeJournal article
local.bibliographicCitation.issue6
local.bibliographicCitation.lastpage1602
local.bibliographicCitation.startpage1596
local.contributor.affiliationMcIntosh, Keith, PV Lighthouse
local.contributor.affiliationZin, Ngwe Soe, College of Engineering and Computer Science, ANU
local.contributor.affiliationNguyen, Hieu, College of Engineering and Computer Science, ANU
local.contributor.affiliationStocks, Matthew, College of Engineering and Computer Science, ANU
local.contributor.affiliationFranklin, Evan, College of Engineering and Computer Science, ANU
local.contributor.affiliationFong, Kean, College of Engineering and Computer Science, ANU
local.contributor.affiliationKho, Teng, College of Engineering and Computer Science, ANU
local.contributor.affiliationChong, Teck, College of Engineering and Computer Science, ANU
local.contributor.affiliationWang, Er-Chien, National University of Singapore
local.contributor.affiliationRatcliff, Tom, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationBlakers, Andrew, College of Engineering and Computer Science, ANU
local.contributor.authoremailu5247402@anu.edu.au
local.contributor.authoruidZin, Ngwe Soe, u4254280
local.contributor.authoruidNguyen, Hieu, u5247402
local.contributor.authoruidStocks, Matthew, u3505308
local.contributor.authoruidFranklin, Evan, u4038737
local.contributor.authoruidFong, Kean, u4448270
local.contributor.authoruidKho, Teng, u4333833
local.contributor.authoruidChong, Teck, u4247767
local.contributor.authoruidRatcliff, Tom, u4311306
local.contributor.authoruidMacDonald, Daniel, u9718154
local.contributor.authoruidBlakers, Andrew, u9113453
local.description.notesImported from ARIES
local.identifier.absfor091204 - Elemental Semiconductors
local.identifier.ariespublicationu4105856xPUB123
local.identifier.citationvolume7
local.identifier.doi10.1109/JPHOTOV.2017.2754060
local.identifier.scopusID2-s2.0-85031809794
local.identifier.uidSubmittedByu4105856
local.type.statusPublished Version

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