Rear Passivation and Point Contacts Formation by Laser Process through Stacks of a-Si:H(i) and a-Si:B/Sb for High Efficiency Silicon Solar Cell

dc.contributor.authorHan, Young
dc.contributor.authorFranklin, Evan
dc.contributor.authorZhang, Xinyu
dc.contributor.authorThomson, Andrew
dc.contributor.authorErnst, Marco
dc.coverage.spatialMunich, Germany
dc.date.accessioned2020-07-08T03:47:08Z
dc.date.createdJune 21-24 2016
dc.date.issued2016
dc.date.updated2020-03-08T07:21:47Z
dc.description.abstractIn this work we investigate the effectiveness of deposited, boron- (for p-type) or antimony-doped (for n-type), amorphous silicon (a-Si:B/Sb) layers for producing multi-purpose films capable of providing both excellent surface passivation and effective localized doping via laser irradiation. We deposit, via sputtering or via a combination of PECVD and sputtering, layers of a-Si:B/Sb or stacks of a-Si:H(i) and a-Si:B/Sb on crystalline silicon substrates, and subsequently employ a KrF 248 nm nanosecond laser to simultaneously remove the film and dope the sub-surface region beneath the film. Sheet resistance measurements indicate that a high level of doping is achieved in laser processed regions for quite a broad range of laser parameters and dopant fractions in deposited films, with sheet resistance as low as around 10 Ω/□ being observed. Furthermore, we evaluate and investigate the passivation capabilities of the films in non-laser processed regions and also determine the recombination properties of the locally laser doped ‘contact’ regions, thus providing an indication of the efficiency potential of PERL type cells utilising these multi-purpose films with laser-doped local contacts.en_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.isbn3936338418en_AU
dc.identifier.issn2196-100Xen_AU
dc.identifier.urihttp://hdl.handle.net/1885/205937
dc.language.isoen_AUen_AU
dc.publisherWIP Wirtschaft und Infrastuktur GmbH & Co Planungs KGen_AU
dc.relation.ispartofseries32nd European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2016
dc.rights© 2016en_AU
dc.sourceProceedings of the 32nd European Photovoltaic Solar Energy Conferenceen_AU
dc.source.urihttps://www.eupvsec-proceedings.com/proceedings?paper=37776en_AU
dc.titleRear Passivation and Point Contacts Formation by Laser Process through Stacks of a-Si:H(i) and a-Si:B/Sb for High Efficiency Silicon Solar Cellen_AU
dc.typeConference paperen_AU
local.bibliographicCitation.lastpage624en_AU
local.bibliographicCitation.startpage621en_AU
local.contributor.affiliationHan, Young, College of Engineering and Computer Science, ANUen_AU
local.contributor.affiliationFranklin, Evan, College of Engineering and Computer Science, ANUen_AU
local.contributor.affiliationZhang, Xinyu, College of Engineering and Computer Science, ANUen_AU
local.contributor.affiliationThomson, Andrew, College of Engineering and Computer Science, ANUen_AU
local.contributor.affiliationErnst, Marco, College of Engineering and Computer Science, ANUen_AU
local.contributor.authoremailu4622142@anu.edu.auen_AU
local.contributor.authoruidHan, Young, u4622142en_AU
local.contributor.authoruidFranklin, Evan, u4038737en_AU
local.contributor.authoruidZhang, Xinyu, u5033752en_AU
local.contributor.authoruidThomson, Andrew, u4323527en_AU
local.contributor.authoruidErnst, Marco, u5457130en_AU
local.description.embargo2037-12-31
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor091204 - Elemental Semiconductorsen_AU
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cellsen_AU
local.identifier.absseo850504 - Solar-Photovoltaic Energyen_AU
local.identifier.ariespublicationu5357342xPUB101en_AU
local.identifier.doi10.4229/EUPVSEC20162016-2AV.1.17en_AU
local.identifier.uidSubmittedByu5357342en_AU
local.publisher.urlwww.eupvsec-proceedings.comen_AU
local.type.statusPublished Versionen_AU

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