Light Emission from Silicon Nanocrystals - Size does Matter !
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Authors
Elliman, Robert
Wilkinson, Andrew
Smith, Nathanael
Spooner, M G
Dall (previously Weijers), Tessica
Lederer, Maximilian
Luther-Davies, Barry
Samoc, Marek
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Hanguk Mulli Hakhoe
Abstract
A brief overview of two recent Si nanocrystal studies undertaken at the Australian National University is presented: recent work on hydrogen passivation of non-radiative defects and attempts to measure optical gain in waveguide structures. In the first study, a generalized treatment of hydrogen passivation and desorption is employed to model the influence of hydrogen on silicon nanocrystal luminescence. Values for reaction-rate parameters are determined from the model and found to be in excellent agreement with values previously determined for paramagnetic Si dangling-bond defects (P b-type centers) found at planar Si/SiO2 interfaces. In the second study, an attempt is made to measure optical gain in silicon nanocrystals by monitoring the intensity of a probe beam propagating in a waveguide structure containing silicon nanocrystals during photo-excitation of the nanocrystals. The probe beam is shown to be attenuated by the excitation demonstrating the dominance of absorptive processes. No gain was observed.
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Journal of the Korean Physical Society