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Proton Irradiation Induced Intermixing in InxGa1_xAs/InP Quantum Wells

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Date

2005

Authors

Gareso, Paulus
Wong-Leung, Jennifer
Jagadish, Chennupati
Dao, Lap Van
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We have investigated the quantum well interdiffusion of In xGa1-xAs/InP QWs with different In composition using proton irradiation. 50 KeV proton implantation with various doses from 5×1014 H/cm2 to 1×1016 H/cm 2 with subsequent annealing at 750° for 6

Description

Keywords

Keywords: Mixing; Inter-diffusion; Microelectronic materials; Quantum wells; Proton irradiation InGaAs quantum wells; Interdiffusion; Intermixing; Proton irradiation

Citation

URI

http://hdl.handle.net/1885/53210

Collections

ANU Research Publications

Source

2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2004.1577500

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