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Control of III-V nanowire crystal structure by growth parameter tuning

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Date

2010

Authors

Dick, Kimberley A.
Caroff, Philippe
Bolinsson, Jessica
Messing, Maria E
Johansson, Jonas
Deppert, Knut
Wallenberg, L Reine
Samuelson, Lars

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Physics Publishing

Abstract

In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III-V materials: GaAs, InAs, GaP, InP, GaSb and InSb,

Description

Keywords

Keywords: GaAs; Growth conditions; Growth parameters; Hexagonal wurtzite structure; Impurity atoms; InAs; InP; Molar fractions; Surface density; Twin planes; V/III ratio; Zincblende structures; Crystal impurities; Gallium alloys; Growth (materials); Indium antimoni

Citation

URI

http://hdl.handle.net/1885/79117

Collections

ANU Research Publications

Source

Semiconductor Science and Technology

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1088/0268-1242/25/2/024009

Restricted until

2037-12-31

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Description
01_Dick_Control_of_III-V_nanowire_2010.pdf (1.68 MB)

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