On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
Date
2017
Authors
Nguyen, Hieu
Macdonald, Daniel
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Publisher
Elsevier
Abstract
We present a systematic investigation of the effects of doping on the luminescence spectra from p-type crystalline silicon wafers. First, we explain the difference in the approaches between the line shape analysis and the generalized Planck’s law in modeling the spectral shape, and connect the two methods together. After that, we elucidate the separate impacts of individual phenomena including band gap narrowing, band tails and dopant bands, Fermi level shifting, and hot carriers on the luminescence spectra in heavily-doped silicon. Finally, employing appropriate excitation levels, we can unambiguously re-examine the growing of the band tails and the broadening of the shallow dopant band, as well as the merging of the valence and shallow dopant bands together, on measured luminescence spectra.
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Keywords
Luminescence, Heavily-doped silicon, Band gap, Fermi energy, Density of states, Hot carriers
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Source
Journal of Luminescence
Type
Journal article
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Access Statement
Open Access
License Rights
CC BY-NC-ND
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