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Stress and Stress Relief in Dielectric Thin Films - The Role of Hydrogen

Date

Authors

Elliman, Robert

Dall (previously Weijers), Tessica

Spooner, M G

Kim, Tae-Hyun

Wilkinson, Andrew

Publisher

Elsevier

Abstract

Novel crack propagation modes are reported in amorphous silicon-rich oxide (SiOx) films deposited onto (1 0 0) silicon substrates and subjected to thermal annealing. These include the formation of straight cracks aligned with 〈0 0 1〉 directions in the

Keywords

Keywords: Annealing; Cracks; Hydrogen; Oscillations; Plasma enhanced chemical vapor deposition; Silica; Stress relief; Stresses; Substrates; Tensile stress; Thermal effects; Thin films; Annealing temperature; Dielectric thin films; ERD; PECVD; Dielectric films Crack; ERD; Hydrogen; PECVD; Stress; Thin film

URI

http://hdl.handle.net/1885/23851

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/j.nimb.2006.04.018

Restricted until

2037-12-31

Downloads

File

Description

01_Elliman_Stress_and_Stress_Relief_in_2006.pdf (153.25 KB)

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