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Nano-porosity in GaSb induced by swift heavy ion irradiation

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dc.contributor.authorKluth, P
dc.contributor.authorSullivan, James
dc.contributor.authorLi, W
dc.contributor.authorWeed, R
dc.contributor.authorSchnohr, C. S
dc.contributor.authorGiulian, R
dc.contributor.authorAraujo, L. L
dc.contributor.authorLei, W
dc.contributor.authorRodriguez, M. D
dc.contributor.authorAfra, B
dc.contributor.authorBierschenk, T
dc.contributor.authorEwing, R. C
dc.contributor.authorRidgway, M. C
dc.date.accessioned2015-12-10T00:19:17Z
dc.date.available2015-12-10T00:19:17Z
dc.date.issued2014-01-13
dc.date.updated2016-02-24T11:23:53Z
dc.description.abstractNano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime. The porous layer morphology differs significantly from that previously reported for low-energy, ion-irradiated GaSb. Prior to the onset of porosity, positron annihilation lifetime spectroscopy indicates the formation of small vacancy clusters in single ion impacts, while transmission electron microscopy reveals fragmentation of the GaSb into nanocrystallites embedded in an amorphous matrix. Following this fragmentation process, macroscopic porosity forms, presumably within the amorphous phase.
dc.description.sponsorshipThe authors thank the Australian Research Council for support and the staff at the ANU Heavy Ion Accelerator Facility for their continued technical assistance. R.C.E. acknowledges the support from the Office of Basic Energy Sciences of the U.S. DOE (Grant No. DE-FG02-97ER45656).en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/38464
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 10/12/15). Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.4861747
dc.sourceApplied Physics Letters
dc.titleNano-porosity in GaSb induced by swift heavy ion irradiation
dc.typeJournal article
local.bibliographicCitation.issue2en_AU
local.bibliographicCitation.startpage023105en_AU
local.contributor.affiliationKluth, Patrick, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationSullivan, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Atomic and Molecular Physics Laboratories, The Australian National Universityen_AU
local.contributor.affiliationLi, Weixing, University of Michigan, United States of Americaen_AU
local.contributor.affiliationWeed, Ryan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Atomic and Molecular Physics Laboratories, The Australian National Universityen_AU
local.contributor.affiliationSchnohr, Claudia, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationGiulian, Raquel, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationAraujo, Leandro, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationLei, Wen, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationRodriguez, Matias, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationAfra, Boshra, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationBierschenk, Thomas, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationEwing, R. C., University of Michigan, United States of Americaen_AU
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4054452en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020000en_AU
local.identifier.absseo970100en_AU
local.identifier.ariespublicationu4860843xPUB114en_AU
local.identifier.citationvolume104en_AU
local.identifier.doi10.1063/1.4861747en_AU
local.identifier.scopusID2-s2.0-84893093953
local.identifier.thomsonID000330431000093
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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