Optoelectronic properties of GaAs nanowire photodector
Date
2012
Authors
Wang, Hao
Parkinson, Patrick
Tian, Jie
Saxena, Dhruv
Mokkapati, Sudha
Gao, Qiang
Prasai, Prakash
Fu, Lan
Karouta, Fouad
Jagadish, Chennupati
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Volume Title
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Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.
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Keywords
Keywords: Gaas nanowires; Measuring device; Optoelectronic properties; Schottky diodes; Spectral response; Gallium arsenide; Microelectronics; Nanowires; Photons; Schottky barrier diodes; Semiconducting gallium; Photodetectors
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Source
COMMAD 2012 Proceedings
Type
Conference paper
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2037-12-31
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