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Optoelectronic properties of GaAs nanowire photodector

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Date

2012

Authors

Wang, Hao
Parkinson, Patrick
Tian, Jie
Saxena, Dhruv
Mokkapati, Sudha
Gao, Qiang
Prasai, Prakash
Fu, Lan
Karouta, Fouad
Jagadish, Chennupati

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

Description

Keywords

Keywords: Gaas nanowires; Measuring device; Optoelectronic properties; Schottky diodes; Spectral response; Gallium arsenide; Microelectronics; Nanowires; Photons; Schottky barrier diodes; Semiconducting gallium; Photodetectors

Citation

URI

http://hdl.handle.net/1885/59855

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472399

Restricted until

2037-12-31

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Description
01_Wang_Optoelectronic_properties_of_2012.pdf (244.41 KB)

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