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Drop epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications

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Date

2012

Authors

Lei, Wen
Parkinson, Patrick
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al0.3Ga0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.

Description

Keywords

Keywords: Controlled size; Crystallization process; Droplet epitaxy; Growth conditions; Infrared photodetector; Optoelectronic applications; Quantum-information processing; Strain-free; Drops; Epitaxial growth; Gallium; Microelectronics; Optical properties; Molecul

Citation

URI

http://hdl.handle.net/1885/60056

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472356

Restricted until

2037-12-31

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Description
01_Lei_Drop_epitaxy_of_strain-free_2012.pdf (238.91 KB)

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