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Growth and characterization of compound semiconductor nanowires on Si

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Date

2011

Authors

Gao, Qiang
Kang, Jung-Hyun
Jackson, Howard E
Smith, Leigh M
Yarrison-Rice, Jan M
Zou, Jin
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE Nanotechnology

Abstract

We review GaAs nanowires and related nanowire heterostructures grown on Si (111) substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and strain effects on the bandgap energy of GaAs nanowires.

Description

Keywords

Keywords: Band gap energy; Compound semiconductors; GaAs; Micro Raman Spectroscopy; Microphotoluminescence; Nanowire heterostructures; Si(111) substrate; Strain effect; Vapor-liquid-solid mechanism; Gallium arsenide; Metallorganic chemical vapor deposition; Nanowir

Citation

URI

http://hdl.handle.net/1885/26795

Collections

ANU Research Publications

Source

Proceedings of IEEE Conference on Nanotechnology (IEEE-NANO 2011)

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/NANO.2011.6144553

Restricted until

2037-12-31

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01_Gao_Growth_and_characterization_of_2011.pdf (935.24 KB)

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