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The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2

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Date

1999

Authors

Cheylan, S
Manson, Neil
Elliman, Robert

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Photoluminescence from Si implanted silica is studied as a function of ion dose and annealing ambient. The photoluminescence emission intensity from samples as-implanted and after annealing at 1000°C in Ar is shown to exhibit a distinct maximum as a func

Description

Keywords

Keywords: Ion dose; Photoluminescence emission intensity; Annealing; Energy transfer; Ion implantation; Nanostructured materials; Photoluminescence; Silica Ion-implantation; Light emission; Nanocrystal; Photoluminescence; Photonics; Silica

Citation

URI

http://hdl.handle.net/1885/93666

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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