The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2
Date
1999
Authors
Cheylan, S
Manson, Neil
Elliman, Robert
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Photoluminescence from Si implanted silica is studied as a function of ion dose and annealing ambient. The photoluminescence emission intensity from samples as-implanted and after annealing at 1000°C in Ar is shown to exhibit a distinct maximum as a func
Description
Keywords
Keywords: Ion dose; Photoluminescence emission intensity; Annealing; Energy transfer; Ion implantation; Nanostructured materials; Photoluminescence; Silica Ion-implantation; Light emission; Nanocrystal; Photoluminescence; Photonics; Silica
Citation
Collections
Source
Nuclear Instruments and Methods in Physics Research: Section B
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
DOI
Restricted until
2037-12-31
Downloads
File
Description