The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2

Cheylan, S; Manson, Neil; Elliman, Robert

The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2

Date

1999

Authors

Cheylan, S

Manson, Neil

Elliman, Robert

Publisher

Elsevier

Abstract

Photoluminescence from Si implanted silica is studied as a function of ion dose and annealing ambient. The photoluminescence emission intensity from samples as-implanted and after annealing at 1000°C in Ar is shown to exhibit a distinct maximum as a func

Keywords

Keywords: Ion dose; Photoluminescence emission intensity; Annealing; Energy transfer; Ion implantation; Nanostructured materials; Photoluminescence; Silica Ion-implantation; Light emission; Nanocrystal; Photoluminescence; Photonics; Silica

URI

http://hdl.handle.net/1885/93666

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ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

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Journal article

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2037-12-31

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The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2

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