Stable Electron-Selective Contacts for Crystalline Silicon Solar Cells Enabling Efficiency over 21.6%

Date

2020

Authors

He, Jian
Wang, Wenjie
Cai, Lun
Lin, Hao
Wang, Zilei
Karuturi, Siva Krishna
Gao, Pingqi

Journal Title

Journal ISSN

Volume Title

Publisher

John Wiley & Sons Ltd.

Abstract

Crystalline silicon (c-Si) solar cells featuring carrier-selective passivating contacts have become a prominent path to develop highly efficient photovoltaic devices. Development of electron-selective materials that can provide excellent surface passivation and low contact resistivity to c-Si substrates while presenting good environmental stability is crucial for practical implementation. Here, an easy approach is demonstrated to achieve low resistivity Ohmic contacts between slightly doped n-type c-Si and aluminum electrodes via simple spin-coating of metal acetylacetone (MAcac) film on a c-Si surface. Contact resistivity of 1.3 mΩ cm2 (18.2 mΩ cm2 with an a-Si:H(i) passivating layer) is realized when a thin calcium acetylacetone (CaAcac) interlayer is introduced between c-Si and Al. An n-Type c-Si solar cell with a full area rear a-Si:H(i)/CaAcac/Al electron-selective contact is demonstrated with a power conversion efficiency of 21.6%. This work not only demonstrates an approach to develop highly efficient n-type c-Si solar cells with effective electron-selective passivating contacts, but also contributes toward accomplishing a simplified fabrication process for photovoltaic devices, from vacuum to solution processing.

Description

Keywords

contact resistivity, c-Si solar cells, electron-selective contacts, surface passivation

Citation

Source

Advanced Functional Materials

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1002/adfm.202005554

Restricted until

2099-12-31