Zn3As2 Nanowires and nanoplatelets: highly efficient infrared emission and photodetection by an earth abundant material

Date

2015-01-14

Authors

Burgess, Timothy
Caroff, Philippe
Wang, Yuda
Badada, Bekele H.
Jackson, Howard E.
Smith, Leigh M.
Guo, Yanan
Tan, Hark Hoe
Jagadish, Chennupati

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Volume Title

Publisher

American Chemical Society

Abstract

The development of earth abundant materials for optoelectronics and photovoltaics promises improvements in sustainability and scalability. Recent studies have further demonstrated enhanced material efficiency through the superior light management of novel nanoscale geometries such as the nanowire. Here we show that an industry standard epitaxy technique can be used to fabricate high quality II-V nanowires (1D) and nanoplatelets (2D) of the earth abundant semiconductor Zn3As2. We go on to establish the optoelectronic potential of this material by demonstrating efficient photoemission and detection at 1.0 eV, an energy which is significant to the fields of both photovoltaics and optical telecommunications. Through dynamical spectroscopy this superior performance is found to arise from a low rate of surface recombination combined with a high rate of radiative recombination. These results introduce nanostructured Zn3As2 as a high quality optoelectronic material ready for device exploration.

Description

Keywords

II-V, MOVPE, nanowire, crystallography, nanoplatelet, optoelectronics, semiconductor

Citation

Source

Nano Letters

Type

Journal article

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DOI

10.1021/nl5036918

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