Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing

Date

2007

Authors

Mokkapati, Sudha
Du, Si
Buda, Manuela
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Springer

Abstract

We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.

Description

Keywords

Keywords: Altered energy level; Intermixing; Proton implantation; Quantum dot lasers; Threshold currents; Annealing; Electron energy levels; Ion implantation; Protons; Semiconducting indium gallium arsenide; Wavelength; Semiconductor quantum dots Ion implantation; Quantum dot lasers

Citation

Source

Nanoscale Research Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1007/s11671-007-9097-x

Restricted until

2037-12-31